| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor substrate, along with an epitaxial substrate and semiconductor device, capable of highly striking a balance between the light emission intensity and the yield. <P>SOLUTION: In the semiconductor device 100, a sulfide of 30×10<SP>10</SP>to 2,000×10<SP>10</SP>pcs./cm<SP>2</SP>in terms of S conversion and an oxide of 2 to 20 at% in terms of O conversion exist in a surface layer 12, thereby preventing C from piling up in an interface between an epitaxial layer 22 and the group III nitride semiconductor substrate 10. As described above, C is prevented from piling up, thereby suppressing the formation of a high resistance layer in the interface between the epitaxial layer 22 and the group III nitride semiconductor substrate 10. In this way, an electric resistance in the interface between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 can be reduced, and crystal quality of the epitaxial layer 22 can be improved. Accordingly, the light emission intensity and the yield of the semiconductor device 100 can be improved. <P>COPYRIGHT: (C)2011,JPO&INPIT |
