GaN SINGLE CRYSTAL SUBSTRATE AND GaN-BASED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which has a large diameter, and a small photoelasticity strain in the principal plane except plane directions of the principal plane of (0001) and (000-1).

SOLUTION: The GaN single crystal substrate 20p includes an area of the principal plane 20pm of ≥10 cm2. The plane direction of the principal plane 20pm is inclined to the (0001) plane or the (000-1) plane 20c at an angle of ≥65° and ≤85°. The photoelasticity strain as measured by photoelasticity at any point in the principal plane 20pm, when the principal plane 20pm is irradiated with light perpendicularly to the plane at an atmospheric temperature of 25°C is ≤5×10-5. The GaN-based semiconductor device has at least one layer of the GaN-based semiconductor layer formed on the principal layer of GaN single crystal substrate, excellent properties and a uniform distribution of the properties.

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