SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with an electrode having low contact resistance to a nitride semiconductor. SOLUTION: The method of manufacturing the semiconductor device includes a carbon-containing layer forming process S4 of forming a carbon-containing layer which contains carbon on the nitride semiconductor layer and a titanium-containing layer forming process S6 of forming a titanium-containing layer containing titanium on the carbon-containing layer. A layer of an all proportional solid solution Ti (C, N) of TiN and TiC is formed between the titanium-containing layer and the nitride semiconductor layer. Consequently, the titanium-containing layer is ohmic-connected to the nitride semiconductor layer at the whole boundary thereof. COPYRIGHT: (C)2011,JPO&INPIT