| 摘要 |
PROBLEM TO BE SOLVED: To secure a sufficient performance (sensitivity or the like) of a pressure sensor without using two monocrystal silicon substrates pasted with each other or a SOI substrate in the pressure sensor, and also to further reduce its cost. SOLUTION: A polysilicon film 3 is formed by film growth on the surface of an oxide film (or a silicon nitride film) 2 formed on one of end surfaces of a silicon substrate 1. In addition, a diffusion region 5 and a piezoresistive element 7 in contact with the diffusion region 5 are formed in the polysilicon film 3. A diaphragm 101 is formed at a position of the piezoresistive element 7 on the oxide film as formed by etching from the other end surface of the silicon substrate 1. COPYRIGHT: (C)2011,JPO&INPIT
|
