发明名称 IMPURITY IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS
摘要 An impurity is implanted by ion implantation into an object to be processed. The ion implantation is performed using an ion beam which is diverged after being temporarily converged.
申请公布号 US2011086500(A1) 申请公布日期 2011.04.14
申请号 US20100842616 申请日期 2010.07.23
申请人 YONEDA KENJI;KUBO HIROKO 发明人 YONEDA KENJI;KUBO HIROKO
分类号 H01L21/266;G21K1/08 主分类号 H01L21/266
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