发明名称 SEMICONDUCTOR DEVICE HAVING METAL WIRINGS OF LAMINATED STRUCTURE
摘要 A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.
申请公布号 US2011086508(A1) 申请公布日期 2011.04.14
申请号 US20100972742 申请日期 2010.12.20
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 KIKUCHI HIDEAKI;NAGAI KOUICHI;MIURA JIROU
分类号 H01L21/768 主分类号 H01L21/768
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