SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE

摘要

Disclosed are a semiconductor element and a solid-state image pickup device which are each provided with a p-type substrate region (21), an n-type charge generation buried region (23) that is buried in part of the upper portion of the substrate region (21) and forms a first potential valley (PW1) so as to configure the substrate region (21) and a photodiode (D1), an n-type accumulation region (24) that is buried apart from the charge generation buried region (23) and forms a second potential valley (PW2) deeper than the first potential valley (PW1), a transfer gate insulation film (33) that is provided between the charge generation buried region (23) and the accumulation region (24), a transfer gate electrode (31) that is provided on the transfer gate insulation film (33) and controls the potential of a transfer channel formed in the substrate region (21) between the charge generation buried region (23) and the accumulation region (24), and a stair potential formation means that forms an electron shutter potential barrier having a stepped potential shape in the transfer channel, and enable the implementation of complete transfer of charge and the securement of a sufficient number of accumulated electrons.