SEMICONDUCTOR DEVICE HAVING SILICON ON STRESSED LINER(SOL)

摘要

PURPOSE: A semiconductor device having silicon on a stress liner is provided to improve the performance of the semiconductor device by including the stress liner. CONSTITUTION: A semiconductor substrate with an embedded disposable layer is prepared. A part of the disposable layer is removed to form a void on the substrate. Materials accumulate in the void to form a stress liner on the substrate. A transistor is formed on the external semiconductor layer. A transistor is separated from the stress layer. Silicide is added to the end of the stress liner for forming an end cap(60).