| 摘要 |
PROBLEM TO BE SOLVED: To provides an inhibition to a short circuit between a bit line and a capacitance contact without employing an SAC (self alignment contact) process of forming a hard mask film on an upper surface of the bit line and providing a side surface of the bit line with a sidewall formed by etching back a nitride film. SOLUTION: The present invention relates to a semiconductor device without a SAC structure in which, after a bit contact inter-layer film 13 is etched except for a place where the bit line 6 is formed, a direct nitride film 19 is formed on the entire top and side surface of the bit line 6 so as to cover the bit line 6. Since the upper and side nitride film thicknesses of the bit line 6 can be substantially the same, the height of the bit line 6 itself can be reduced, thus enabling further miniaturization. In addition, since the sidewall nitride film is formed on the sidewall of the bit line 6 without requiring an etch-back process, the nitride film having a constant film thickness can be formed on the sidewall of the bit line 6 as compared with the SAC structure. COPYRIGHT: (C)2011,JPO&INPIT |
