| 发明名称 |
SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent boron of P-type region in a light-receiving sensor from diffusing into N-type region, thereby preventing decrease in saturated charge amount. <P>SOLUTION: A solid-state imaging apparatus includes a photodiode 15 composed of: the N-type region 13 formed on a semiconductor substrate 11; a first silicon carbide layer 21 formed on the N-type region 13; and P-type region 14 with a silicon layer 22 formed on the silicon carbide layer 21. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011077498(A) |
申请公布日期 |
2011.04.14 |
| 申请号 |
JP20100127960 |
申请日期 |
2010.06.03 |
| 申请人 |
SONY CORP |
发明人 |
DAICHI TOMOKAZU;ARAKAWA SHINICHI;MIYANAMI YUUKI |
| 分类号 |
H01L27/146;H01L21/205;H01L21/761;H01L27/14 |
主分类号 |
H01L27/146 |
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