| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which allows improvement in characteristics, to provide a method of manufacturing the nitride semiconductor element, to provide a nitride semiconductor light emitting element, and to provide a method of manufacturing a nitride semiconductor layer which allows improvement in crystallinity and exhibits excellent surface flatness. <P>SOLUTION: Described herein is: the method for manufacturing the nitride semiconductor layer by stacking, on a silicon nitride layer, a first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking a second nitride semiconductor layer on the first nitride semiconductor layer; the nitride semiconductor element and nitride semiconductor light-emitting element each including the nitride semiconductor layer; and the method for manufacturing the nitride semiconductor element. <P>COPYRIGHT: (C)2011,JPO&INPIT |
