| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting diode element which has high light extraction efficiency and is low in operating voltage. <P>SOLUTION: The nitride semiconductor light emitting diode element includes: an n-type nitride semiconductor layer; a nitride semiconductor light emitting layer provided on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer provided on the nitride semiconductor light emitting layer: an In-containing nitride semiconductor layer provided on the p-type nitride semiconductor layer; and a transparent conductive film provided on the In-containing nitride semiconductor layer. The In-containing nitride semiconductor layer contains In so as to vary in composition. <P>COPYRIGHT: (C)2011,JPO&INPIT |
