GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element having a large resistance against COD(catastrophic optical damage). SOLUTION: The group III nitride semiconductor laser element 11 has a laser waveguide extending in the direction of a crossing line between an m-n plane and a semi-polar plane 17a. First and second end surfaces 26, 28 as laser resonators are provided on both ends of the laser waveguide. The first and second end surfaces 26, 28 cross the m-n plane (or a-n plane). A c+ axis vector forms an acute angle together with a waveguide vector WV. The waveguide vector WV corresponds to a direction from the second end surface 28 to the first end surface 26. The thickness of a first dielectric multilayer film 43a on the first end surface (C+ side) 26 is smaller than the thickness of a second dielectric multilayer film 43b on the second end surface (C- side) 28. COPYRIGHT: (C)2011,JPO&INPIT