发明名称 |
METHOD FOR FABRICATING A GATE STRUCTURE |
摘要 |
An method of fabricating the gate structure comprises: sequentially depositing and patterning a dummy oxide layer and a dummy gate electrode layer on a substrate; surrounding the dummy oxide layer and the dummy gate electrode layer with a nitrogen-containing dielectric layer and an interlayer dielectric layer; removing the dummy gate electrode layer; removing the dummy oxide layer by exposing a surface of the dummy oxide layer to a vapor mixture comprising NH3 and a fluorine-containing compound at a first temperature; heating the substrate to a second temperature to form an opening in the nitrogen-containing dielectric layer; depositing a gate dielectric; and depositing a gate electrode.
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申请公布号 |
US2011086502(A1) |
申请公布日期 |
2011.04.14 |
申请号 |
US20100757295 |
申请日期 |
2010.04.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH MATT;HUANG YI-CHEN;HSU FAN-YI;HUI OUYANG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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