发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 Latchup is prevented from occurring accompanying increasingly finer geometries of a chip. NchMOSFET N1 and PchMOSFET P1 form a CMOS circuit including: NchMOSFET N2 whose gate, drain and back gate are connected to back gate of N1 and PchMOSFET P2 whose gate, drain and back gate are connected to back gate of P1. Source of N2 is connected to source of N1. Source of P2 is connected to source of P1. N2 is always connected between the grounded source of N1 and the back gate of N1, while P2 is connected between source of P1 connected to a power supply and the back gate of P1. Each of N2 and P2 functions as a voltage limiting element (a limiter circuit).
申请公布号 US2011084342(A1) 申请公布日期 2011.04.14
申请号 US20100967479 申请日期 2010.12.14
申请人 RENESAS ELECTRONICS CORPORATION 发明人 OKUSHIMA MOTOTSUGU
分类号 H01L27/092 主分类号 H01L27/092
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