| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase the break down voltage margin by forming a first conductive impurity layer in the second conductive well on the lower of the element isolation layer. CONSTITUTION: A second conductive well is formed on the first conductivity semiconductor substrate. An element isolation film(130) is formed within the second conductive well. The first conductive dopant layer is formed within the second conductive well of the lower part of the element isolation layer. A gate(150) is formed on upper part the second conductive well in order to be overlapped with the one side of the element isolation layer.</p> |
