| 摘要 |
PURPOSE: An image sensor and manufacturing method thereof are provided to form a light blocking film on an insulation layer to contact a color filter layer, thereby enhancing light blocking effects. CONSTITUTION: A second insulating layer is formed on a semiconductor substrate with a photo diode(110). A light blocking film(150) is formed on the second insulating layer. The light blocking film is formed in a trench and is vertical to the photo diode. A color filter layer(160) is formed on the second insulating layer. The color filter layer makes the light blocking film correspond to a filter area.
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