| 摘要 |
PURPOSE: An image sensor and manufacturing method thereof are provided to eliminate a need of a planarization protective layer, thereby minimizing a light interfering phenomenon. CONSTITUTION: A second substrate with a metal line is coupled with a first substrate(110). The first substrate comprises a photo diode(114), a device isolation film, and a transistor. The first and second substrates are flipped over. A second insulating layer is formed on the lower surface of the first substrate. A first trench is formed on the second insulation layer. A first color filter(300) is formed in the first trench.
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