发明名称 IMAGE SENSOR AND FABRICATING METHOD THEREOF
摘要 <p>PURPOSE: An image sensor and a fabricating method thereof are provided to stably maintain the potential of first wells by allowing a first well bias, applied to one of the first wells, to be shared with other first wells. CONSTITUTION: In an image sensor and a fabricating method thereof, a substrate(110) defines a pixel region(I) and a non-pixel region(II). . A first well(112) is formed within the substrate corresponding to the non-pixel region. A wiring structure(122) comprises a plurality of wires(124a-124c) and a plurality of an insulating layer(122). The first well and the bias well are the same conductive type.</p>
申请公布号 KR20110037763(A) 申请公布日期 2011.04.13
申请号 KR20090095324 申请日期 2009.10.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, YUN KI;LEE, DUCK HYUNG
分类号 H01L27/146 主分类号 H01L27/146
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