| 摘要 |
<p>PURPOSE: A semiconductor device and a method for fabricating thereof are provided to maximize the coupling ratio between a control gate and the capacitance between tunneling regions by forming the floating gate of a trench type. CONSTITUTION: In a semiconductor device and a method for fabricating thereof, an element isolation film(130) defines a first well region(110) and an active area including a second well region(120). An insulating layer(140) is formed on the inside of a trench which is formed in the first and second well region. A floating gate(150) is formed on the insulating layer. Source/drain regions(160,170) are formed on one side of the first well region. A bulk region(180) is formed on the other side of the first well region.</p> |
