SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to improve the optical confinement factor of an active layer between metal layers by using surface plasmon resonance which is generated from metal layer. CONSTITUTION: In a semiconductor light emitting device, a second conductive layer(120) is located on a first conductive semiconductor layer(110). A buffer layer is formed between a substrate(150) and the first conductive layer. An active layer(130) generates light through the recombination of holes and electronics. At least two metal layer(140) penetrates through the active layer up and down. The first and second conductive layers and the active layer are made of a compound for generating light through the recombination of the electronics and holes.