| 摘要 |
PURPOSE: An image sensor and a manufacturing method for the same are provided to shield the light completely in the infrared light shielding bandwidth by forming the infrared shielding filter using the optical crystal on the top of the mirco lens. CONSTITUTION: A photo diode, a color filter layer, and a micro lens(209) are successively formed on a semiconductor substrate(201). A plate layer(210) is formed in order to reduce the level difference on the micro lens. The infrared ray and ultraviolet shielding filter layers are formed on the plate layer. The infrared ray and ultraviolet shielding filter layers are formed between the color filter layer and the micro lens.
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