METHOD FOR PREPARING VERTICALLY GROWN CARBON NANOTUBES

摘要

PURPOSE: A method for preparing vertically grown carbon nano-tube is provided to optimize the property of the carbon nano-tube by regulating the vertical growing of the carbon nano-tube. CONSTITUTION: A method for preparing vertically grown carbon nano-tube includes the following: SiO_x is deposited on a silicon wafer(A). The silicon wafer with the SiO_x is thermal processed to form Si nano-crystal(B). An Fe catalyst is deposited on the Si nano-crystal, and a thermal processing process is implemented(C). C_2H_4, Ar, and H_2 are supplied to vertically grow carbon nano-tube(D). The x value of the SiO_x deposited on the Si water is between 1.2 and 1.8.