| 摘要 |
<p>A photoelectric conversion device (1) includes a photoelectric conversion layer (30) which mainly composed of a compound semiconductor containing a group Ib element, at least two group IIIb elements including Ga, and a group VIb element and contains an alkaline(-earth) metal. Concentration distributions of the alkaline (-earth) metal and Ga in the photoelectric conversion layer (30) in the thickness direction includes a valley with the lowest concentration and an area with a higher concentration between a substrate (10, 11) and the valley, and satisfy Expressions (1) and (2) below: 1.0 × 10 - 6 ‰¤ A N mol / cc ‰¤ 2.0 × 10 - 5
and 1.0 ‰¤ C N / C G
where A N represents the alkaline (-earth) metal concentration at the valley, B N represents the highest alkaline (-earth) metal concentration between the substrate and the valley, A G represents the Ga concentration at the valley, B G represents the highest Ga concentration between the substrate and the valley, C N = B N /A N , and C G = B G /A G .</p> |
