METHOD FOR FORMING OHMIC CONTACT OF NANOWIRE, THE NANOWIRE THEREOF AND SEEBECK COEFFICIENT MEASURING METHOD FOR THE NANOWIRE THEREOF

摘要

PURPOSE: A method for forming ohmic contact of nanowire, a nanowire thereof, and a seebeck coefficient measuring method for the nanowire thereof are provided to completely remove the surface oxidation layer of the nano wire by using the plasma etching inside the chamber. CONSTITUTION: A nanowire(30) is formed on the top of the substrate. A copolymer layer and an electron-beam resist(70) are successively formed on the top of the substrate in order to include nanowire. Portions of the electron beam resist layer and the copolymer layer are etched so that at least a part of nano wire is exposed.