Method for producing a scintillation material with low voltage birefringence and high homogeneity of the refraction index

摘要

Producing a scintillation material comprising a metal compound (I) or (II), in an amount of 10-10000 ppm, comprises optionally mixing (I) with at least one of the dopant (D), heating up to the melting point of the substance or the mixture, growing the crystal or crystalline structure, and cooling the crystal or crystalline structure from the growth temperature up to a temperature of 100[deg] C with a cooling rate of less than 20 K/hour. Producing a scintillation material comprising a metal compound of formula (LnX 3) (I) or (LnX 3:D) (II), in an amount of 10-10000 ppm, comprises optionally mixing (I) with at least one of the dopant (D), heating up to the melting point of the substance or the mixture, growing the crystal or crystalline structure, and cooling the crystal or crystalline structure from the growth temperature up to a temperature of 100[deg] C with a cooling rate of less than 20 K/hour. Ln : Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu; X : halo; and D : a cationic dopant comprising Y, Zr, Pd, Hf or Bi.