发明名称 |
Compensation of reticle flatness on focus deviation in optical lithography |
摘要 |
A method for lithography patterning includes providing a mask for photolithography patterning; measuring a mask flatness of the mask; calculating focal deviation of imaging the mask to a substrate in a lithography apparatus; adjusting the lithography apparatus to have a compensated focal plane of the mask based on the focal deviation; and exposing the semiconductor substrate utilizing the mask and the lithography apparatus with adjusted focal plane.
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申请公布号 |
US7924405(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20070829701 |
申请日期 |
2007.07.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH LEE-CHIH;LEE HSIN-CHANG;CHEN CHIA-JEN;WANG TZU-YI |
分类号 |
G03B27/52;G03B27/32 |
主分类号 |
G03B27/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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