发明名称 Integrated circuit system employing dipole multiple exposure
摘要 An integrated circuit system that includes: providing a first mask including a first feature; exposing the first mask to a radiation source to form an image of the first feature on a photoresist material that is larger than a structure to be formed, the photoresist material being formed over a substrate that includes the integrated circuit system; providing a second mask including a second feature; aligning the second mask over the image of the first mask to form an overlap region; and exposing the second mask to the radiation source to form an image of the second feature on the photoresist material that is larger than the structure to be formed.
申请公布号 US7926000(B2) 申请公布日期 2011.04.12
申请号 US20070683691 申请日期 2007.03.08
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 TAN SIA KIM;LIN QUNYING
分类号 G06F17/50 主分类号 G06F17/50
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