发明名称 |
Non-volatile memory circuit using ferroelectric capacitor storage element |
摘要 |
A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.
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申请公布号 |
US7924599(B1) |
申请公布日期 |
2011.04.12 |
申请号 |
US19890443018 |
申请日期 |
1989.11.29 |
申请人 |
RAMTRON INTERNATIONAL CORPORATION |
发明人 |
EVANS, JR. JOSEPH T.;MILLER WILLIAM D.;WOMACK RICHARD H. |
分类号 |
G11C7/00;G11C11/22;G11C11/56;G11C14/00;G11C17/04 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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