| 摘要 |
A varactor element having a junction region, in which the depletion capacitance of the varactor element varies when a reverse bias voltage is applied to the varactor element. The varactor element has an exponential depletion capacitance-voltage relation, e.g. obtained by providing a predetermined doping profile in the junction region. The varactor element can be used in a narrow tone spacing varactor stack arrangement, in which two varactor elements are connected in an anti-series configuration. A low impedance path for base band frequency components between a control node and each of two RF connection nodes is provided, while for fundamental and higher order harmonic frequencies, a high impedance path is provided.
|
