发明名称 |
Metal gate semiconductor device and manufacturing method |
摘要 |
A method for manufacturing a metal gate includes providing a substrate including a gate electrode located on the substrate. A plurality of layers is formed, including a first layer located on the substrate and the gate electrode and a second layer adjacent the first layer. The layers are etched to form a plurality of adjacent spacers, including a first spacer located on the substrate and adjacent the gate electrode and a second spacer adjacent the first spacer. The first spacer is then etched and a metal layer is formed on the device immediately adjacent to the gate electrode. The metal layer is then reacted with the gate electrode to form a metal gate.
|
申请公布号 |
US7923759(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20060400853 |
申请日期 |
2006.04.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACUTURING COMPANY, LTD. |
发明人 |
HUANG CHIEN-CHAO;CHEN KUANG-HSIN;YANG FU-LIANG |
分类号 |
H01L29/768;H01L21/28;H01L21/336;H01L21/82;H01L21/8234;H01L27/02 |
主分类号 |
H01L29/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|