发明名称 |
Method and structure for reducing cross-talk in image sensor devices |
摘要 |
Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.
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申请公布号 |
US7923279(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20090405454 |
申请日期 |
2009.03.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHING-CHUN;HSU TZU-HSUAN;LIU HAN-CHI;SU CHUN-MING |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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