| 摘要 |
A method used during semiconductor device fabrication comprises forming at least two types of transistors. A first transistor type may comprise a CMOS transistor comprising gate oxide and having a wide active area and/or a long channel, and the second transistor type may comprise a NAND comprising tunnel oxide and having a narrow active area and/or short gate length. The transistors are exposed to a nitridation ambient. Various process embodiments and completed structures are disclosed.
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