| 摘要 |
A method of controlling a NAND-type flash memory provided with a latch circuit in which data is temporarily stored has measuring a first consumption current of the latch circuit in a first state in which the latch circuit is caused to retain first logic; measuring a second consumption current of the latch circuit in a second state in which the latch circuit is caused to retain second logic obtained by inverting the first logic; and comparing the first consumption current and the second consumption current to cause the latch circuit to retain logic corresponding to the state corresponding to a smaller one of the first consumption current and the second consumption current.
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