| 摘要 |
A bipolar transistor (1) comprising a subcollector layer (3), a collector layer (4, 5), a base layer (6) and an emitter layer (7) which are successively built up and having: the subcollector layer (3) formed with a projection (3A) and recesses (3B), an upper part above the projection constituting an intrinsic transistor region (1A) of the bipolar transistor; insulator layer (10) buried between the recesses of the subcollector layer and the collector layer (4); a boundary interface between the subcollector layer and the collector layer held between the insulator layers; the base layer (6) made of a single crystal layer and provided with a base electrode (12) on a region becoming an extrinsic base layer (6B) of the base layer; and the subcollector layer provided with a collector electrode (11). The bipolar transistor has advantages of its emitter made finer in width, a reduced parasitic capacitance between its base and collector and improved high-frequency characteristics.
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