发明名称 Method for treatment of samples for transmission electron microscopes
摘要 A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory devices, commonly called DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness. The method also includes capturing one or more images through a portion of the slice using a transmission electron microscope.
申请公布号 US7923683(B2) 申请公布日期 2011.04.12
申请号 US20080258965 申请日期 2008.10.27
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 ZHANG QI HUA;NIOU CHORNG SHYR;LIU PAN;LI MING
分类号 G06F17/50;G06K9/00 主分类号 G06F17/50
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