发明名称 Semiconductor integrated circuit
摘要 A protection circuit with suppressed erroneous operation due to power source fluctuation has a first resistor and a capacitor connected in series between a power source line and a ground line, an inverter with an input connected between the first resistor and the capacitor, and a MOS transistor with a gate electrode that receives an output of the inverter and with a drain electrode and source electrode connected to the power source line and the ground line. When high voltage fluctuation occurs in the power source line, a level change at a connection point between the first resistor and the capacitor is delayed according to a time constant. By the delay, the MOS transistor that receives an output of the inverter is temporarily turned on and discharges a high voltage to the ground line.
申请公布号 US7924539(B2) 申请公布日期 2011.04.12
申请号 US20090501007 申请日期 2009.07.10
申请人 RENESAS ELECTRONICS CORPORATION 发明人 ISHIZUKA HIROYASU;TANAKA KAZUO
分类号 H02H3/22 主分类号 H02H3/22
代理机构 代理人
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