| 摘要 |
A structure including a TiW oxygen plasma mask, a photoresist mask above and in contact with the TiW oxygen plasma mask, a 2000 angstrom thick oxygen plasma vaporizable RuO0.8 electrode layer partially under and in contact with the TiW oxygen plasma mask, the RuO0.8 electrode layer not being completely covered by a pattern of the TiW oxygen plasma mask, a first side of a PZT ferroelectric layer in contact with the RuO0.8 electrode layer and a second RuO0.8 electrode layer in contact with a second side of the PZT ferroelectric layer.
|
