发明名称 TFT substrate for display device with a semiconductor layer that extends beyond the gate electrode structure and manufacturing method of the same
摘要 Disclosed is a TFT substrate for a display apparatus comprising a gate wiring including a gate electrode, a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode, and a semiconductor layer disposed between the gate wiring and the data wiring, wherein the semiconductor layer under the drain electrode is disposed within an area overlapping the gate electrode and the semiconductor layer under the source electrode extends outward to an area not overlapping the gate electrode. Advantageously, the present disclosure provides a TFT substrate for a display apparatus having a high aperture ratio and causing less afterimaging, and a manufacturing method of the same.
申请公布号 US7923726(B2) 申请公布日期 2011.04.12
申请号 US20060352181 申请日期 2006.02.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NA BYOUNG-SUN;KWAK SANG-KI;KIM DONG-GYU;LEE KYUNG-PHIL
分类号 H01L31/113 主分类号 H01L31/113
代理机构 代理人
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