发明名称 |
Polycrystalline silicon as an electrode for a light emitting diode and method of making the same |
摘要 |
Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.
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申请公布号 |
US7923911(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20080339431 |
申请日期 |
2008.12.19 |
申请人 |
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
KWOK HOI SING;WONG MAN;MENG ZHIGUO;SUN JIAXIN;ZHU XIULING |
分类号 |
H01L29/78;H01J1/62;H01L29/08 |
主分类号 |
H01L29/78 |
代理机构 |
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地址 |
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