| 摘要 |
A semiconductor device comprises a semiconductor substrate; a diffusion layer formed on the semiconductor substrate; at least two wiring layers formed opposite to each other over the semiconductor substrate; signal lines for transmitting a signal maintaining a predetermined voltage, each of the signal lines being formed in each of the two wiring layers; shield lines fixed to a constant voltage to shield the signal lines, each of the shield lines being formed adjacent to each of the signal lines in the two wiring layers; and a gate electrode formed over the semiconductor substrate via an insulation film. In the semiconductor device, at least one of the signal lines formed in a lower wiring layer of the at least two wiring layers is electrically connected to the gate electrode opposed in a stacking direction.
|
