发明名称 |
Electrically conductive path forming below barrier oxide layer and integrated circuit |
摘要 |
Methods of forming an electrically conductive path under a barrier oxide layer of a semiconductor-on-insulator (SOI) substrate and an integrated circuit including the path are disclosed. In one embodiment, the method includes forming an electrically conductive path below a barrier oxide layer of a semiconductor-on-insulator (SOI) substrate, the method comprising: forming a first barrier oxide layer on a semiconductor substrate; forming the electrically conductive path within the first barrier oxide layer; and forming a second barrier oxide layer on the first barrier oxide layer. The electrically conductive path allows reduction of SRAM area by forming a wiring path underneath the barrier oxide layer on the SOI substrate.
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申请公布号 |
US7923840(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20070621699 |
申请日期 |
2007.01.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COSTRINI GREGORY;DIVAKARUNI RAMACHANDRA;GAMBINO JEFFREY P.;MANN RANDY W. |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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