Nonvolatile memory device using resistance material

摘要

The present invention provides a nonvolatile memory device that uses a resistance material. The nonvolatile memory device includes: a stacked memory cell array having a plurality of memory cell layers stacked in a vertical direction, the stacked memory cell array having at least one memory cell group and at least one redundancy memory cell group; and a repair control circuit coupled to the stacked memory cell array, the repair control circuit configured to repair a defective one of the at least one memory cell group with a selected one of the at least one redundancy memory cell group. The features that enable repair improve the fabrication yield of the nonvolatile memory device.