发明名称 |
Semiconductor memory device having improved voltage transmission path and driving method thereof |
摘要 |
Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.
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申请公布号 |
US7924592(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20100652875 |
申请日期 |
2010.01.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SUN-WON;BAEK SEUNG-DUK |
分类号 |
G11C5/06;G11C5/00;H01L23/02;H01L23/48 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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