| 摘要 |
Disclosed herein is a semiconductor device, including: an insulating film provided on a semiconductor substrate so as to have a trench pattern; a gate insulating film provided so as to cover an inner wall of the trench pattern; and a gate electrode formed so as to be filled in the trench pattern through the gate insulating film and so as to protrude more widely than the trench pattern on both sides of the trench pattern on the insulating film.
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