发明名称 |
Microelectronic device patterned by ablating and subsequently sintering said microelectronic device |
摘要 |
A microelectronic device includes a non-polymeric substrate, an organic interlayer, and a indium tin oxide layer formed on the organic interlayer; the indium tin oxide layer including an ablated feature within said indium tin oxide layer, wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering. |
申请公布号 |
US7923837(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20070981011 |
申请日期 |
2007.10.31 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
BETRABET CHINMAY;NELSON CURT LEE |
分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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