发明名称 Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device
摘要 A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2 or inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.
申请公布号 US7923355(B2) 申请公布日期 2011.04.12
申请号 US20080257845 申请日期 2008.10.24
申请人 NUFLARE TECHNOLOGY, INC. 发明人 YAJIMA MASAYOSHI;MORIYAMA YOSHIKAZU
分类号 H01L21/20;H01L21/31;H01L21/36 主分类号 H01L21/20
代理机构 代理人
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