发明名称 Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
摘要 A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
申请公布号 US7922862(B2) 申请公布日期 2011.04.12
申请号 US20090505940 申请日期 2009.07.20
申请人 OCTEC INC.;TOKYO ELECTRON LIMITED 发明人 OKUMURA KATSUYA;HIMORI SHINJI;NAGASEKI KAZUYA;MATSUMARU HIROKI;MATSUYAMA SHOICHIRO;TAKAHASHI TOSHIKI
分类号 H01L21/00;H05H1/46;B01J19/08;C23C14/00;C23C16/00;C23F4/00;C25D17/10;H01J37/32;H01L21/205;H01L21/3065 主分类号 H01L21/00
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