发明名称 |
Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
摘要 |
A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
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申请公布号 |
US7922862(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20090505940 |
申请日期 |
2009.07.20 |
申请人 |
OCTEC INC.;TOKYO ELECTRON LIMITED |
发明人 |
OKUMURA KATSUYA;HIMORI SHINJI;NAGASEKI KAZUYA;MATSUMARU HIROKI;MATSUYAMA SHOICHIRO;TAKAHASHI TOSHIKI |
分类号 |
H01L21/00;H05H1/46;B01J19/08;C23C14/00;C23C16/00;C23F4/00;C25D17/10;H01J37/32;H01L21/205;H01L21/3065 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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