| 发明名称 |
METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER READABLE STORAGE MEDIUM |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a metal oxide film that can make adhesion with Cu favorable. <P>SOLUTION: The method for forming a metal oxide film is configured to supply gas containing an organic metal compound to the base so as to form a metal oxide film on the base. The method has a step 2 for forming the metal oxide film on the base by supplying the organic metal compound to the base, and a step 4 for exposing the metal oxide film to oxygen-containing gas or oxygen-containing plasma at the end of the film-forming process of the metal oxide film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011071210(A) |
申请公布日期 |
2011.04.07 |
| 申请号 |
JP20090219283 |
申请日期 |
2009.09.24 |
| 申请人 |
TOKYO ELECTRON LTD;TOHOKU UNIV |
发明人 |
NEISHI KOJI;KOIKE JUNICHI;MATSUMOTO KENJI |
| 分类号 |
H01L21/316;C23C16/40;H01L21/28;H01L21/285;H01L21/31;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/316 |
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