| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that forms contacts with high density, and to provide a method of manufacturing the same. <P>SOLUTION: In an NAND type flash memory 1, all contacts formed in a single interlayer dielectric, i.e. bit-line contacts CB and non-bit-line contacts CN are arranged at some of a plurality of lattice points LP of tub-dimension lattice L arrayed at a period P1 in a direction V1 and at a period P2 in a direction V2 crossing the direction V2. Then bit line contacts CB in one direction wherein active areas extend are periodically shifted in position in basic units of three or more active areas which are successively arrayed. Further, two or more contacts are connected to conductive members applied with the same potential. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
